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| SMD Type Silicon Epitaxial Planar Type 1SS307 Diodes Features Low forward voltage Low reverse Current Small total capacitance :VF =1.0 V(Typ) :IR= 0.1 nA (Typ) +0.1 2.4-0.1 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 1.3-0.1 :CT = 3.0 pF(Typ) 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Maximum (peak) reverse voltage Reverse voltage Average forward current Maximum (peak) forward current Surge current (10 ms) Power dissipation Junction Temperature Storage Temperature Symbol VRM VR IO IFM IFSM P Tj Tstg Rating 35 30 100 300 2 150 125 -55 + 125 Unit V V mA mA A mW Electrical Characteristics Ta = 25 Parameter Forward voltage Reverse current Total capacitance Symbol VF IR CT Test Conditions IF = 100 mA VR = 30 V VR = 0, f = 1.0 MHz Min Typ 1.0 0.1 3.0 Max 1.3 10 6.0 Unit V nA pF Marking Marking C9 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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